1. Refer to this portion of a specification sheet. Determine the values of reverse-gate-source voltage and gate current if the FET was forced to accept it.
2. At which of the following condition(s) is the depletion region uniform?
3. What is the ratio of ID / IDSS for VGS = 0.5 VP?
4. Referring to this transfer curve, determine ID at VGS = 2 V.
5. Which of the following controls the level of ID?
6. It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device.
7. The BJT is a ________ device. The FET is a ________ device.
8. Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA.
9. The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is ________ the pinch-off value.
10. The transfer curve is not defined by Shockley's equation for the ________.
11. What is the purpose of adding two Zener diodes to the MOSFET in this figure?
12. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA.
13. The region to the left of the pinch-off locus is referred to as the ________ region.
14. Refer to the following curves. Calculate ID at VGS = 1 V.
15. Which of the following transistor(s) has (have) depletion and enhancement types?
16. The three terminals of the JFET are the ________, ________, and ________.
17. Which of the following is (are) the terminal(s) of a field-effect transistor (FET).
18. A BJT is a ________-controlled device. The JFET is a ________ - controlled device.
19. How many terminals can a MOSFET have?
20. Refer to the following figure. Calculate VGS at ID = 8 mA for k = 0.278 × 10–2 A/V2.
21. The level of VGS that results in ID = 0 mA is defined by VGS = ________.
22. Which of the following FETs has the lowest input impedance?
23. Which of the following applies to MOSFETs?
24. At which of the following is the level of VDS equal to the pinch-off voltage?
25. Which of the following represent(s) the cutoff region for an FET?