Question Set

1. A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

Show Similar Question And Answers
QA->As per the revised Goods and Services Tax (GST) norms, the GST on Haj and Kailash Mansarovar Yatra has been reduced from 18 per cent to how much per cent?....
QA->A rectangular plot 67 metres long is paved with 2546 tiles each measuring 50 square centimetre. Find the width of the plot ?....
QA->The India Space Research Organisation's _____________ moon orbiter, lander and rover launch into space atop a GSLV Mark III-M1 rocket from the Satish Dhawan Space Centre on Sriharikota Island on July 22, 2019?....
QA->.If A=B/2,B=C(Square)/2 and C=2 Square root of 3 which is A of the following?....
QA->.If a+b=7 and Square root of b(Square)-9=4 find’a’....
MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....
MCQ->Which of the following conditions must be satisfied for a transistor to remain under saturation? Its collector to base junction should be under forward bias.Its collector to base junction should be under reverse bias.Its emitter to base junction should be under reverse bias.Its emitter to base junction should be under forward bias. Select the correct answer from the codes given below:....
MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....
MCQ->For transmission of waveform a dielectric medium of permittivity ε1 into a dielectric medium of lower permittivity ε2 , (ε1 > ε2) the critical angle of incidence θc (relative to the interface) is given by....
MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution