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1. Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.





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MCQ->Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.

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MCQ->The addition of impurity in extrinsic semiconductor is about 1 part in 108 parts.....
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MCQ->Assertion (A): Acceptor extrinsic semiconductor has higher conductivity than intrinsic semiconductor.Reason (R): Addition of p-type impurity produces an allowable discrete energy level just above valence band.

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